We experimentally demonstrate the operation of a hybrid integrated optoelectronic circuit with optical input and output consisting of a GaAs/ AlGaAs multiple-quantum-well ( MQW) photodetector, modulator and GaAs metal semiconductor field effect transistor ( MESFET). 将GaAs/AlGaAs多量子阱光探测器、光调制器与GaAs场效应晶体管(FET)混合集成,构成FET-SEED灵巧象元。
InSb films are widely used in optoelectronic components, reluctance components, Hall element and transistor structure devices. InSb薄膜被广泛应用于光电元件、磁阻元件、霍尔元件以及晶体管结构器件之中。